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| to-92mod plastic-encapsulate transistors 2SC2060 transistor (npn) feature z power dissipation p cm : 0.75 w (tamb=25 . ) z low saturation voltage (v ce(sat) =0.15v at 500ma) z complementary pair with 2sa934 maximum ratings* t a =25 unless otherwise noted symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 32 v v ebo emitter-base voltage 5 v i c collector current -continuous 1 a p d total device dissipation 750 mw t j junction temperature 150 t st g storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in m ax unit collector-base breakdown voltage v(br) cbo i c = 100 a , i e =0 40 v collector-emitter breakdown voltage v(br) ceo i c = 1ma , i b =0 32 v emitter-base breakdown voltage v(br) ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb =20v , i e =0 0.5 a emitter cut-off current i ebo v eb =4v , i c =0 0.1 a dc current gain h fe(1) v ce =3v, i c = 100ma 80 400 collector-emitter saturation voltage v ce(sat) i c = 500m a, i b = 50ma 0.4 v transition frequency f t v ce =5v, i e =-50ma 50 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 30 pf to-92mod 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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